FQB6N25TM Todos los transistores

 

FQB6N25TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB6N25TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB6N25TM Datasheet (PDF)

 ..1. Size:759K  fairchild semi
 fqb6n25tm.pdf pdf_icon

FQB6N25TM

May 2000TMQFETQFETQFETQFETFQB6N25 / FQI6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology

 9.1. Size:729K  fairchild semi
 fqb6n40ctm fqi6n40ctu.pdf pdf_icon

FQB6N25TM

TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.2. Size:596K  fairchild semi
 fqb6n90tm am002.pdf pdf_icon

FQB6N25TM

December 2000TMQFETQFETQFETQFETFQB6N90 / FQI6N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology

 9.3. Size:756K  fairchild semi
 fqb6n40c.pdf pdf_icon

FQB6N25TM

November 2013FQB6N40CN-Channel QFET MOSFET400 V, 6 A, 1.0 Description FeaturesThese N-Channel enhancement mode power field effect 6 A, 400 V, RDS(on) = 1.0 (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 3 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 16nC)technology has been especially tailored to min

MOSTRAR MÁS

Otros transistores... FQB5N60CTM , FQB5N60TM , FQB5N90TM , FQB5P10TM , FQB5P20TM , FQB630TM , FQB65N06TM , FQB6N15TM , 4N60 , FQB6N40CTM , FQB6N50 , FQB6N60CTM , FQB6N60TM , FQB6N70TM , FQB6N80TM , FQB6N90TMAM002 , FQB70N10TMAM002 .

History: SST202 | NCE85H21TC

 

 
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