FQB6N60TM Todos los transistores

 

FQB6N60TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB6N60TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB6N60TM Datasheet (PDF)

 ..1. Size:842K  fairchild semi
 fqb6n60tm.pdf pdf_icon

FQB6N60TM

October 2008QFETFQB6N60 / FQI6N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially

 7.1. Size:681K  fairchild semi
 fqb6n60ctm fqi6n60ctu.pdf pdf_icon

FQB6N60TM

QFETFQB6N60C / FQI6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to

 9.1. Size:729K  fairchild semi
 fqb6n40ctm fqi6n40ctu.pdf pdf_icon

FQB6N60TM

TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.2. Size:596K  fairchild semi
 fqb6n90tm am002.pdf pdf_icon

FQB6N60TM

December 2000TMQFETQFETQFETQFETFQB6N90 / FQI6N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology

MOSTRAR MÁS

Otros transistores... FQB5P20TM , FQB630TM , FQB65N06TM , FQB6N15TM , FQB6N25TM , FQB6N40CTM , FQB6N50 , FQB6N60CTM , IRLZ44N , FQB6N70TM , FQB6N80TM , FQB6N90TMAM002 , FQB70N10TMAM002 , FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM .

History: BSB104N08NP3G | KI1400DL | NP83P06PDG | SI4825DY | ME15N25 | AF10N60S | AP65SL190AP

 

 
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