FQD11P06TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD11P06TF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm

Encapsulados: D-PAK

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FQD11P06TF datasheet

 ..1. Size:851K  fairchild semi
 fqd11p06tf fqd11p06tm fqd11p06 fqu11p06 fqu11p06tu.pdf pdf_icon

FQD11P06TF

January 2009 QFET FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -60V, RDS(on) = 0.185 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especi

 5.1. Size:831K  cn vbsemi
 fqd11p06tm.pdf pdf_icon

FQD11P06TF

FQD11P06TM www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

 6.1. Size:1339K  onsemi
 fqd11p06 fqu11p06.pdf pdf_icon

FQD11P06TF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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