FQD12P10TF Todos los transistores

 

FQD12P10TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD12P10TF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 160 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: D-PAK
     - Selección de transistores por parámetros

 

FQD12P10TF Datasheet (PDF)

 ..1. Size:666K  fairchild semi
 fqd12p10tf fqd12p10tm.pdf pdf_icon

FQD12P10TF

January 2009QFETFQD12P10 / FQU12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been espec

 5.1. Size:877K  fairchild semi
 fqd12p10tm f085.pdf pdf_icon

FQD12P10TF

February 2010tmFQD12P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially t

 6.1. Size:2919K  kexin
 fqd12p10.pdf pdf_icon

FQD12P10TF

SMD Type MOSFETP-Channel MOSFETFQD12P10 (KQD12P10)TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 VDS (V) =-100V ID =-9.4 A (VGS =-10V)D RDS(ON) 290m (VGS =-10V)0.127+0.10.80-0.1max Low gate charge Low Crss+ 0.1 Fast switching 2.3 0.60- 0.1G+0.154 .60 -0.15S Absolute Maximu

 6.2. Size:777K  cn vbsemi
 fqd12p10.pdf pdf_icon

FQD12P10TF

FQD12P10www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch

MOSTRAR MÁS

Otros transistores... FQD10N20TF , FQD10N20TM , FQD11P06TF , FQD11P06TM , FQD12N20LTF , FQD12N20LTM , FQD12N20TF , FQD12N20TM , IRF520 , FQD12P10TM , FQD13N06LTF , FQD13N06LTM , FQD13N06TF , FQD13N06TM , FQD13N10TF , FQD13N10TM , FQD14N15TM .

History: IXTP50N28T | 3SK249

 

 
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