FQD12P10TM Todos los transistores

 ..1. Size:877K  fairchild semi
 fqd12p10tm f085.pdf

February 2010 tm FQD12P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially t

 ..2. Size:666K  fairchild semi
 fqd12p10tf fqd12p10tm.pdf

January 2009 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been espec

 6.1. Size:2919K  kexin
 fqd12p10.pdf

SMD Type MOSFET P-Channel MOSFET FQD12P10 (KQD12P10) TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 VDS (V) =-100V ID =-9.4 A (VGS =-10V) D RDS(ON) 290m (VGS =-10V) 0.127 +0.1 0.80-0.1 max Low gate charge Low Crss + 0.1 Fast switching 2.3 0.60- 0.1 G +0.15 4 .60 -0.15 S Absolute Maximu

 6.2. Size:777K  cn vbsemi
 fqd12p10.pdf

FQD12P10 www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switch

 9.1. Size:801K  fairchild semi
 fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf

January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia

 9.2. Size:640K  fairchild semi
 fqd12n20ltm f085.pdf

June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall

 9.3. Size:699K  fairchild semi
 fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf

January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been

 9.4. Size:1315K  onsemi
 fqd12n20l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:905K  cn vbsemi
 fqd12n20.pdf

FQD12N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING