FQD13N06TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQD13N06TF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5.8 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: D-PAK

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FQD13N06TF Datasheet (PDF)

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fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf

January 2009QFETFQD13N06 / FQU13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

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January 2009QFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been e

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FQD13N06L / FQU13N06LN-Channel QFET MOSFET60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V,Description ID = 5.5 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 17 pF)planar stripe and DMOS technology. This advanced MOSFET technology has b

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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