FQD19N10LTM MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: FQD19N10LTM

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January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been

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FQD19N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

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January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especial

Otros transistores... FQD16N15TM , FQD17N08LTF , FQD17N08LTM , FQD17P06TF , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , IRF840 , FQD19N10TF , FQD19N10TM , FQD1N50TF , FQD1N50TM , FQD1N60CTF , FQD1N60CTM , FQD1N60TF , FQD1N60TM .