IRFW640A Todos los transistores

 ..1. Size:212K  1
 irfi640a irfw640a.pdf

 ..2. Size:512K  samsung
 irfw640a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Lower RDS(ON) 0.144 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 8.1. Size:216K  1
 irfi644a irfw644a.pdf

 8.2. Size:506K  samsung
 irfw644a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Lower RDS(ON) 0.214 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 9.1. Size:215K  1
 irfi630a irfw630a.pdf

 9.2. Size:210K  1
 irfi620a irfw620a.pdf

 9.3. Size:205K  1
 irfi610a irfw610a.pdf

 9.4. Size:214K  1
 irfi634a irfw634a.pdf

 9.5. Size:209K  1
 irfi614a irfw614a.pdf

 9.6. Size:216K  1
 irfi624a irfw624a.pdf

 9.7. Size:712K  fairchild semi
 irfw630b irfi630b.pdf

IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switc

 9.8. Size:697K  fairchild semi
 irfw630b.pdf

November 2013 IRFW630B N-Channel MOSFET 200 V, 9 A, 400 m Features Description These N-Channel enhancement mode power field effect 9.0 A, 200 V, RDS(on) = 400 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 4.5 A planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state Low Gate Charge (Typ.

 9.9. Size:798K  fairchild semi
 irfw610b irfi610b.pdf

November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t

 9.10. Size:509K  samsung
 irfw630a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 0.333 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 9.11. Size:505K  samsung
 irfw610a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 1.169 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 9.12. Size:513K  samsung
 irfw614a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Lower RDS(ON) 1.393 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.13. Size:514K  samsung
 irfw624a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Low RDS(ON) 0.742 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara