FQD2N50TM Todos los transistores

 

FQD2N50TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD2N50TM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 6 nC

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 30 pF

Resistencia drenaje-fuente RDS(on): 5.3 Ohm

Empaquetado / Estuche: D-PAK

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FQD2N50TM Datasheet (PDF)

1.1. fqd2n50tf fqd2n50tm.pdf Size:714K _fairchild_semi

FQD2N50TM
FQD2N50TM

April 2000 TM QFET QFET QFET QFET FQD2N50 / FQU2N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technolog

5.1. fqd2n80tf fqd2n80tm.pdf Size:724K _fairchild_semi

FQD2N50TM
FQD2N50TM

January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially

5.2. fqd2n90tf fqd2n90tm.pdf Size:841K _fairchild_semi

FQD2N50TM
FQD2N50TM

January 2009 QFET® FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especi

 5.3. fqd2n40tf fqd2n40tm.pdf Size:723K _fairchild_semi

FQD2N50TM
FQD2N50TM

April 2000 TM QFET QFET QFET QFET FQD2N40 / FQU2N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.4A, 400V, RDS(on) = 5.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technolog

5.4. fqd2n60ctm.pdf Size:557K _fairchild_semi

FQD2N50TM
FQD2N50TM

November 2013 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 A produced using Fairchild Semiconductor’s proprietary • Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 4.3 pF)

 5.5. fqd2n30tm.pdf Size:729K _fairchild_semi

FQD2N50TM
FQD2N50TM

May 2000 TM QFET QFET QFET QFET FQD2N30 / FQU2N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.7A, 300V, RDS(on) = 3.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology h

5.6. fqd2n60c fqu2n60c.pdf Size:762K _fairchild_semi

FQD2N50TM
FQD2N50TM

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini-

5.7. fqd2n100tf fqd2n100tm.pdf Size:731K _fairchild_semi

FQD2N50TM
FQD2N50TM

January 2009 QFET® FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 1000V, RDS(on) = 9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5 pF) This advanced technology has been especially t

5.8. fqd2n100 fqu2n100.pdf Size:731K _fairchild_semi

FQD2N50TM
FQD2N50TM

January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to

5.9. fqd2n60tf fqd2n60tm.pdf Size:560K _fairchild_semi

FQD2N50TM
FQD2N50TM

April 2000 TM QFET QFET QFET QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology

5.10. fqd2n80 fqu2n80.pdf Size:724K _fairchild_semi

FQD2N50TM
FQD2N50TM

January 2008 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to

5.11. fqd2n90 fqu2n90.pdf Size:841K _fairchild_semi

FQD2N50TM
FQD2N50TM

January 2009 QFET FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored

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