FQD2N60TM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD2N60TM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.7 Ohm

Encapsulados: D-PAK

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FQD2N60TM datasheet

 ..1. Size:560K  fairchild semi
 fqd2n60tf fqd2n60tm fqu2n60tu.pdf pdf_icon

FQD2N60TM

April 2000 TM QFET QFET QFET QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology

 7.1. Size:762K  fairchild semi
 fqd2n60c fqu2n60c fqu2n60ctu.pdf pdf_icon

FQD2N60TM

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tail

 7.2. Size:557K  fairchild semi
 fqd2n60ctm.pdf pdf_icon

FQD2N60TM

November 2013 FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Features Description 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 4.3 pF)

 7.3. Size:618K  onsemi
 fqd2n60c fqu2n60c.pdf pdf_icon

FQD2N60TM

TM QFET FQD2N60C / FQU2N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.5 nC) planar stripe, DMOS technology. Low Crss ( typical 4.3 pF) This advanced technology has been especially tailored

MOSTRAR MÁS

Otros transistores... FQD2N100TF, FQD2N100TM, FQD2N30TM, FQD2N40TF, FQD2N40TM, FQD2N50TF, FQD2N50TM, FQD2N60TF, 2N7000, FQD2N80TF, FQD2N80TM, FQD2N90TF, FQD2N90TM, FQD2P40TF, FQD2P40TM, FQD30N06LTF, FQD30N06LTM