FQD3N50CTM Todos los transistores

 

FQD3N50CTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD3N50CTM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: D-PAK
 

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FQD3N50CTM Datasheet (PDF)

 5.1. Size:812K  fairchild semi
 fqd3n50ctf.pdf pdf_icon

FQD3N50CTM

March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai

 6.1. Size:927K  fairchild semi
 fqd3n50c fqu3n50c.pdf pdf_icon

FQD3N50CTM

March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai

 9.1. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQD3N50CTM

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

 9.2. Size:737K  fairchild semi
 fqd3n30tf fqd3n30tm.pdf pdf_icon

FQD3N50CTM

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

MOSTRAR MÁS

Otros transistores... FQD30N06LTF , FQD30N06LTM , FQD30N06TF , FQD30N06TM , FQD3N30TF , FQD3N30TM , FQD3N40TM , FQD3N50CTF , RFP50N06 , FQD3N60TM , FQD3P20TF , FQD3P20TM , FQD3P50TF , FQD3P50TM , FQD4N20LTM , FQD4N20TF , FQD4N25TF .

History: IPD80R750P7 | FXN40N03C | AP9973GH-HF | AFC6332 | AOW20C60 | STP5NK50ZFP | SPD07N20G

 

 
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