FQD3N60TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD3N60TM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm

Encapsulados: D-PAK

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FQD3N60TM datasheet

 ..1. Size:573K  fairchild semi
 fqd3n60tm fqu3n60 fqu3n60tu.pdf pdf_icon

FQD3N60TM

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h

 7.1. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQD3N60TM

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h

 7.2. Size:500K  fairchild semi
 fqd3n60ctm ws.pdf pdf_icon

FQD3N60TM

November 2013 FQD3N60CTM_WS N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Features Description 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 10.5 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 5 pF) MOSFET te

 7.3. Size:954K  onsemi
 fqd3n60ctm-ws.pdf pdf_icon

FQD3N60TM

FQD3N60CTM-WS N-Channel QFET MOSFET Description 600 V, 2.4 A, 3.4 This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Features stripe and DMOS technology. This advanced MOSFET 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A technology has been especially tailored to reduce on-state resistance, and to pro

MOSTRAR MÁS

Otros transistores... FQD30N06LTM, FQD30N06TF, FQD30N06TM, FQD3N30TF, FQD3N30TM, FQD3N40TM, FQD3N50CTF, FQD3N50CTM, 12N60, FQD3P20TF, FQD3P20TM, FQD3P50TF, FQD3P50TM, FQD4N20LTM, FQD4N20TF, FQD4N25TF, FQD4N25TM