FQD4P25TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD4P25TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm

Encapsulados: D-PAK

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FQD4P25TM datasheet

 ..1. Size:980K  fairchild semi
 fqd4p25tm ws.pdf pdf_icon

FQD4P25TM

November 2013 FQD4P25TM_WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC) technology has been especi

 0.1. Size:2975K  onsemi
 fqd4p25tm-ws.pdf pdf_icon

FQD4P25TM

FQD4P25TM-WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, Description ID = -1.55 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductor s Low Crss (Typ. 10.3 pF) proprietary planar stripe and DMOS technology. This advanced MOSFET t

 7.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P25TM

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn

 7.2. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf pdf_icon

FQD4P25TM

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn

MOSTRAR MÁS

Otros transistores... FQD3P50TM, FQD4N20LTM, FQD4N20TF, FQD4N25TF, FQD4N25TM, FQD4N50TF, FQD4N50TM, FQD4P25TF, AO4407, FQD4P40, FQD4P40TF, FQD4P40TM, FQD5N15TF, FQD5N15TM, FQD5N20LTF, FQD5N20LTM, FQD5N20TF