FQD4P40TF Todos los transistores

 

FQD4P40TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD4P40TF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.1 Ohm
   Paquete / Cubierta: D-PAK
 

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FQD4P40TF Datasheet (PDF)

 ..1. Size:759K  fairchild semi
 fqd4p40tf fqd4p40tm.pdf pdf_icon

FQD4P40TF

January 2009QFETFQD4P40 / FQU4P40 400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.7A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especia

 7.1. Size:780K  fairchild semi
 fqd4p40.pdf pdf_icon

FQD4P40TF

November 2013FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Description FeaturesThese P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 18 nC)technology has been especially t

 7.2. Size:816K  onsemi
 fqd4p40.pdf pdf_icon

FQD4P40TF

FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 ADescription Low Gate Charge (Typ. 18 nC)These P-Channel enhancement mode power field effect Low Crss (Typ. 11 pF)transistors are produced using ON Semiconductors 100% Avalanche Testedproprietary, planar stripe, DMOS technology.

 9.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P40TF

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

MOSTRAR MÁS

Otros transistores... FQD4N20TF , FQD4N25TF , FQD4N25TM , FQD4N50TF , FQD4N50TM , FQD4P25TF , FQD4P25TM , FQD4P40 , 10N65 , FQD4P40TM , FQD5N15TF , FQD5N15TM , FQD5N20LTF , FQD5N20LTM , FQD5N20TF , FQD5N30TF , FQD5N30TM .

History: STL90N3LLH6 | NCE70N1K1K

 

 
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