FQD5N20LTF Todos los transistores

 

FQD5N20LTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD5N20LTF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 4.8 nC

Tiempo de elevación (tr): 90 nS

Conductancia de drenaje-sustrato (Cd): 40 pF

Resistencia drenaje-fuente RDS(on): 1.2 Ohm

Empaquetado / Estuche: D-PAK

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FQD5N20LTF Datasheet (PDF)

1.1. fqd5n20ltf fqd5n20ltm.pdf Size:618K _fairchild_semi

FQD5N20LTF
FQD5N20LTF

October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especia

2.1. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N20LTF
FQD5N20LTF

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

 3.1. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N20LTF
FQD5N20LTF

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

3.2. fqd5n20tf.pdf Size:690K _fairchild_semi

FQD5N20LTF
FQD5N20LTF

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

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