FQD5N50 Todos los transistores

 

FQD5N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD5N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 18 nC

Resistencia drenaje-fuente RDS(on): 1.8 Ohm

Empaquetado / Estuche: TO-252

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FQD5N50 Datasheet (PDF)

1.1. fqd5n50tf.pdf Size:768K _fairchild_semi

FQD5N50
FQD5N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology

1.2. fqd5n50.pdf Size:548K _fairchild_semi

FQD5N50
FQD5N50

TIGER ELECTRONIC CO.,LTD 500V N-Channel MOSFET FQD5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche an

 1.3. fqd5n50c fqu5n50c.pdf Size:664K _fairchild_semi

FQD5N50
FQD5N50

October 2008 QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

1.4. fqd5n50ctf fqd5n50ctm.pdf Size:664K _fairchild_semi

FQD5N50
FQD5N50

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

 1.5. fqd5n50c.pdf Size:664K _fairchild_semi

FQD5N50
FQD5N50

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

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