FQD6N25TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQD6N25TF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 6.6 nC
   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: D-PAK

Búsqueda de reemplazo de MOSFET FQD6N25TF

FQD6N25TF Datasheet (PDF)

..1. Size:798K fairchild semi
fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf

October 2008QFETFQD6N25 / FQU6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especia

9.1. Size:654K fairchild semi
fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf

October 2008QFETFQD6N40C / FQU6N40C 400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especiall

9.2. Size:679K fairchild semi
fqd6n60ctm.pdf

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s

9.3. Size:757K fairchild semi
fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf

October 2008QFETFQD6N50C / FQU6N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especially t

9.4. Size:723K fairchild semi
fqd6n40tf fqd6n40tm.pdf

April 2000TMQFETQFETQFETQFETFQD6N40 / FQU6N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 400V, RDS(on) = 1.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technolog

9.5. Size:678K fairchild semi
fqd6n60c.pdf

9.6. Size:648K onsemi
fqd6n50c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.7. Size:940K onsemi
fqd6n40c.pdf

FQD6N40CN-Channel QFET MOSFET 400 V, 4.5 A, 1.0 DescriptionFeaturesThis N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar 4.5 A, 400 V, RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 16 nC)technology has been especially tailored to reduce on-st

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: