FQD6N40TF Todos los transistores

 

FQD6N40TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD6N40TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 13 nC

Tiempo de elevación (tr): 65 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 1.15 Ohm

Empaquetado / Estuche: D-PAK

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FQD6N40TF Datasheet (PDF)

1.1. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi

FQD6N40TF
FQD6N40TF

April 2000 TM QFET QFET QFET QFET FQD6N40 / FQU6N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.2A, 400V, RDS(on) = 1.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technolog

3.1. fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Size:654K _fairchild_semi

FQD6N40TF
FQD6N40TF

October 2008 QFET® FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especiall

 5.1. fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf Size:757K _fairchild_semi

FQD6N40TF
FQD6N40TF

October 2008 QFET® FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 19nC) planar stripe, DMOS technology. • Low Crss (typical 15pF) This advanced technology has been especially t

5.2. fqd6n60c.pdf Size:678K _fairchild_semi

FQD6N40TF
FQD6N40TF

® QFET FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 7 pF) minimize on-s

 5.3. fqd6n60ctm.pdf Size:679K _fairchild_semi

FQD6N40TF
FQD6N40TF

® QFET FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 7 pF) minimize on-s

5.4. fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf Size:798K _fairchild_semi

FQD6N40TF
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October 2008 QFET® FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 250V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especia

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