IRF2805PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95493AIRF2805PbFHEXFET Power MOSFETTypical Applicationsl Industrial Motor DriveDVDSS = 55VFeaturesl Advanced Process TechnologyRDS(on) = 4.7mGl Ultra Low On-Resistancel 175C Operating TemperatureID = 75Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the latest processingtech

PD - 95944AIRF2805SPbFIRF2805LPbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 4.7ml 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 135ASl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the lates

PD - 96383AAUTOMOTIVE GRADEAUIRF2805SAUIRF2805LHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.4.7m 175C Operating TemperatureG Fast Switching Fully Avalanche RatedS ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DescriptionSp

PD - 94428IRF2805AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsDl Climate Control, ABS, Electronic Braking,VDSS = 55V Windshield WipersFeaturesRDS(on) = 4.7mGl Advanced Process Technologyl Ultra Low On-ResistanceID = 75Al 175C Operating TemperatureSl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxDescriptionSpecifically designed

PD - 97690AAUTOMOTIVE GRADEAUIRF2805Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel 175C Operating TemperatureDV(BR)DSS55Vl Fast SwitchingRDS(on) typ.3.9ml Fully Avalanche Ratedmax 4.7ml Repetitive Avalanche AllowedGup to TjmaxID (Silicon Limited)175Al Lead-Free, RoHS CompliantSID (Package Limited)75Al Autom

PD - 95944AIRF2805SPbFIRF2805LPbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 4.7ml 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 135ASl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the lates

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2805SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2805IIRF2805FEATURESStatic drain-source on-resistance:RDS(on) 4.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R