IRF3704ZCLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF3704ZCLPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 67 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
   Paquete / Cubierta: TO-262

Búsqueda de reemplazo de MOSFET IRF3704ZCLPBF

IRF3704ZCLPBF Datasheet (PDF)

..1. Size:352K international rectifier
irf3704zclpbf.pdf

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

5.1. Size:352K international rectifier
irf3704zcspbf.pdf

5.2. Size:252K inchange semiconductor
irf3704zcs.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZCSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

6.1. Size:360K international rectifier
irf3704zlpbf irf3704zpbf irf3704zspbf.pdf

PD - 95463IRF3704ZPbFIRF3704ZSPbFIRF3704ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3704ZIRF3704ZS IRF3704ZLAbso

6.2. Size:246K inchange semiconductor
irf3704z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZIIRF3704ZFEATURESLow drain-source on-resistance:RDS(on) 7.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RA

6.3. Size:258K inchange semiconductor
irf3704zs.pdf

Isc N-Channel MOSFET Transistor IRF3704ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: