IRF3709LPBF Todos los transistores

 

IRF3709LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3709LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 171 nS
   Cossⓘ - Capacitancia de salida: 1064 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-262

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IRF3709LPBF Datasheet (PDF)

 ..1. Size:231K  international rectifier
irf3709lpbf irf3709pbf irf3709spbf.pdf

IRF3709LPBF
IRF3709LPBF

PD - 95495IRF3709PbFSMPS MOSFETIRF3709SPbFIRF3709LPBFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive

 ..2. Size:231K  infineon
irf3709pbf irf3709spbf irf3709lpbf.pdf

IRF3709LPBF
IRF3709LPBF

PD - 95495IRF3709PbFSMPS MOSFETIRF3709SPbFIRF3709LPBFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive

 6.1. Size:121K  international rectifier
irf3709 irf3709s irf3709l.pdf

IRF3709LPBF
IRF3709LPBF

PD - 94071IRF3709SMPS MOSFETIRF3709SIRF3709LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-

 7.1. Size:337K  international rectifier
irf3709z irf3709zl irf3709zs.pdf

IRF3709LPBF
IRF3709LPBF

PD - 95835IRF3709ZIRF3709ZSIRF3709ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum RatingsParameter M

 7.2. Size:312K  international rectifier
irf3709zcs.pdf

IRF3709LPBF
IRF3709LPBF

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

 7.3. Size:377K  international rectifier
irf3709zlpbf irf3709zpbf irf3709zspbf.pdf

IRF3709LPBF
IRF3709LPBF

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 7.4. Size:121K  international rectifier
irf3709.pdf

IRF3709LPBF
IRF3709LPBF

PD - 94071IRF3709SMPS MOSFETIRF3709SIRF3709LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-

 7.5. Size:312K  international rectifier
irf3709zcl.pdf

IRF3709LPBF
IRF3709LPBF

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

 7.6. Size:361K  international rectifier
irf3709zclpbf.pdf

IRF3709LPBF
IRF3709LPBF

PD - 95529IRF3709ZCSPbFIRF3709ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. Uni

 7.7. Size:377K  infineon
irf3709zpbf irf3709zspbf irf3709zlpbf.pdf

IRF3709LPBF
IRF3709LPBF

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 7.8. Size:271K  inchange semiconductor
irf3709zcs.pdf

IRF3709LPBF
IRF3709LPBF

isc N-Channel MOSFET Transistor IRF3709ZCSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM

 7.9. Size:248K  inchange semiconductor
irf3709zs.pdf

IRF3709LPBF
IRF3709LPBF

isc N-Channel MOSFET Transistor IRF3709ZSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM

 7.10. Size:243K  inchange semiconductor
irf3709s.pdf

IRF3709LPBF
IRF3709LPBF

isc N-Channel MOSFET Transistor IRF3709SDESCRIPTIONDrain Current :I = 90A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL A

 7.11. Size:247K  inchange semiconductor
irf3709z.pdf

IRF3709LPBF
IRF3709LPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3709Z IIRF3709ZFEATURESLow drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 7.12. Size:246K  inchange semiconductor
irf3709.pdf

IRF3709LPBF
IRF3709LPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3709 IIRF3709FEATURESLow drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RAT

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