IRF3711 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF3711
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 220 nS
   Cossⓘ - Capacitancia de salida: 1770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-220AB

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IRF3711 Datasheet (PDF)

..1. Size:245K international rectifier
irf3711.pdf

PD- 94062BIRF3711SMPS MOSFETIRF3711SIRF3711LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn

..2. Size:269K international rectifier
irf3711s irf3711 irf3711l.pdf

PD- 94062DIRF3711SMPS MOSFETIRF3711SIRF3711LApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Usel High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive Induced

..3. Size:287K international rectifier
irf3711lpbf irf3711pbf irf3711spbf.pdf

PD- 94948IRF3711PbFSMPS MOSFETIRF3711SPbFIRF3711LPbFAppIicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 20V 6.0m 110Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive

..4. Size:245K inchange semiconductor
irf3711.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3711IIRF3711FEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

0.1. Size:361K international rectifier
irf3711zlpbf irf3711zpbf irf3711zspbf.pdf

PD - 95530IRF3711ZPbFIRF3711ZSPbFIRF3711ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3711ZIRF3711ZS IRF3711ZLAbsolut

0.2. Size:302K international rectifier
irf3711z irf3711zs irf3711zl.pdf

PD - 94757AIRF3711ZIRF3711ZSIRF3711ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qg20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3711ZIRF3711ZS IRF3711ZLAbsolute Maximum RatingsPa

0.3. Size:277K international rectifier
irf3711zcl.pdf

PD - 94792IRF3711ZCSIRF3711ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qg20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3711ZCS IRF3711ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDr

0.4. Size:277K international rectifier
irf3711zcs.pdf

0.5. Size:352K international rectifier
irf3711zclpbf.pdf

PD -95110IRF3711ZCSPbFIRF3711ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3711ZCSPbF IRF3711ZCLPbFAbsoIute Maximum RatingsParame

0.6. Size:270K inchange semiconductor
irf3711s.pdf

isc N-Channel MOSFET Transistor IRF3711SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGSDrain Source Voltage: V = 20V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM RAT

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