IRF3711SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3711SPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 220 nS
Cossⓘ - Capacitancia de salida: 1770 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de IRF3711SPBF MOSFET
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IRF3711SPBF datasheet
irf3711lpbf irf3711pbf irf3711spbf.pdf
PD- 94948 IRF3711PbF SMPS MOSFET IRF3711SPbF IRF3711LPbF AppIications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 6.0m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive
irf3711s irf3711 irf3711l.pdf
PD- 94062D IRF3711 SMPS MOSFET IRF3711S IRF3711L Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced
irf3711s.pdf
isc N-Channel MOSFET Transistor IRF3711S DESCRIPTION Static drain-source on-resistance RDS(on) 6m @V = 10V GS Drain Source Voltage V = 20V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RAT
irf3711zlpbf irf3711zpbf irf3711zspbf.pdf
PD - 95530 IRF3711ZPbF IRF3711ZSPbF IRF3711ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg l Lead-Free 20V 6.0m 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3711Z IRF3711ZS IRF3711ZL Absolut
Otros transistores... IRF3710ZLPBF, IRF3710ZPBF, IRF3710ZSPBF, IRF3711, IRF3711L, IRF3711LPBF, IRF3711PBF, IRF3711S, TK10A60D, IRF3711ZCL, IRF3711ZCLPBF, IRF3711ZLPBF, IRF3711ZPBF, IRF3711ZSPBF, IRF3717PBF, IRF3717PBF-1, IRF3805L-7PPBF
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