IRF3717PBF Todos los transistores

 ..1. Size:187K  international rectifier
 irf3717pbf.pdf

PD - 95719 IRF3717PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Synchronous MOSFET for Notebook 4.4m @VGS = 10V Processor Power 20V 20A l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO-8 l Very Low RDS(on) Top View l Fully Characteriz

 0.1. Size:252K  international rectifier
 irf3717pbf-1.pdf

IRF3717PbF-1 HEXFET Power MOSFET VDS 20 V A A 1 8 S D RDS(on) max 4.4 m 2 7 S D (@V = 10V) GS 3 Qg (typical) 22 nC 6 S D ID 4 5 G D 20 A (@T = 25 C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Pack

 7.1. Size:248K  international rectifier
 irf3717.pdf

PD - 95843 IRF3717 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Synchronous MOSFET for Notebook 4.4m @VGS = 10V Processor Power 20V 20A l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO-8 l Very Low RDS(on) Top View l Fully Characterized Avalanche Vol

 8.1. Size:321K  international rectifier
 irf3710a.pdf

RoHS IRF3710 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) DESCRIPTION The Nell IRF3710 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

 8.2. Size:361K  international rectifier
 irf3711zlpbf irf3711zpbf irf3711zspbf.pdf

PD - 95530 IRF3711ZPbF IRF3711ZSPbF IRF3711ZLPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg l Lead-Free 20V 6.0m 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3711Z IRF3711ZS IRF3711ZL Absolut

 8.3. Size:172K  international rectifier
 irf3710z.pdf

PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes th

 8.4. Size:245K  international rectifier
 irf3711.pdf

PD- 94062B IRF3711 SMPS MOSFET IRF3711S IRF3711L Applications HEXFET Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn

 8.5. Size:269K  international rectifier
 irf3711s irf3711 irf3711l.pdf

PD- 94062D IRF3711 SMPS MOSFET IRF3711S IRF3711L Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced

 8.6. Size:302K  international rectifier
 irf3711z irf3711zs irf3711zl.pdf

PD - 94757A IRF3711Z IRF3711ZS IRF3711ZL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg 20V 6.0m 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3711Z IRF3711ZS IRF3711ZL Absolute Maximum Ratings Pa

 8.7. Size:382K  international rectifier
 irf3710zlpbf irf3710zpbf irf3710zspbf.pdf

PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn

 8.8. Size:218K  international rectifier
 irf3710pbf.pdf

PD - 94954D IRF3710PbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m G l Fast Switching l Fully Avalanche Rated ID = 57A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre

 8.9. Size:277K  international rectifier
 irf3711zcl.pdf

PD - 94792 IRF3711ZCS IRF3711ZCL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg 20V 6.0m 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3711ZCS IRF3711ZCL Absolute Maximum Ratings Parameter Max. Units VDS Dr

 8.10. Size:353K  international rectifier
 auirf3710z auirf3710zs.pdf

PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE

 8.11. Size:277K  international rectifier
 irf3711zcs.pdf

PD - 94792 IRF3711ZCS IRF3711ZCL Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg 20V 6.0m 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3711ZCS IRF3711ZCL Absolute Maximum Ratings Parameter Max. Units VDS Dr

 8.12. Size:287K  international rectifier
 irf3711lpbf irf3711pbf irf3711spbf.pdf

PD- 94948 IRF3711PbF SMPS MOSFET IRF3711SPbF IRF3711LPbF AppIications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 6.0m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive

 8.13. Size:330K  international rectifier
 auirf3710zstrl.pdf

PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE

 8.14. Size:94K  international rectifier
 irf3710.pdf

PD - 91309A IRF3710 HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 23m G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 8.15. Size:291K  international rectifier
 irf3710lpbf irf3710spbf.pdf

PD - 95108A IRF3710SPbF IRF3710LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

 8.16. Size:382K  international rectifier
 irf3710zpbf irf3710zspbf irf3710zlpbf.pdf

PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn

 8.17. Size:275K  international rectifier
 irf3710s irf3710l.pdf

PD - 94201B IRF3710S IRF3710L HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 23m l Fast Switching G l Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 8.18. Size:184K  international rectifier
 irf3710s.pdf

PD -91310C IRF3710S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175 C Operating Temperature RDS(on) = 0.025 Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 8.19. Size:352K  international rectifier
 irf3711zclpbf.pdf

PD -95110 IRF3711ZCSPbF IRF3711ZCLPbF AppIications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg l Lead-Free 20V 6.0m 16nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 IRF3711ZCSPbF IRF3711ZCLPbF AbsoIute Maximum Ratings Parame

 8.20. Size:274K  first silicon
 irf3710.pdf

SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 1.Gate 2.Drain

 8.21. Size:246K  inchange semiconductor
 irf3710z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3710Z IIRF3710Z FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 8.22. Size:245K  inchange semiconductor
 irf3711.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3711 IIRF3711 FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

 8.23. Size:258K  inchange semiconductor
 irf3710zs.pdf

Isc N-Channel MOSFET Transistor IRF3710ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 8.24. Size:229K  inchange semiconductor
 irf3710.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF3710 FEATURES Drain Current I =57A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high effciency switch mode power supplies, Power fa

 8.25. Size:258K  inchange semiconductor
 irf3710s.pdf

Isc N-Channel MOSFET Transistor IRF3710S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.26. Size:256K  inchange semiconductor
 irf3710zl.pdf

Isc N-Channel MOSFET Transistor IRF3710ZL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10

 8.27. Size:256K  inchange semiconductor
 irf3710l.pdf

Isc N-Channel MOSFET Transistor IRF3710L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100

 8.28. Size:270K  inchange semiconductor
 irf3711s.pdf

isc N-Channel MOSFET Transistor IRF3711S DESCRIPTION Static drain-source on-resistance RDS(on) 6m @V = 10V GS Drain Source Voltage V = 20V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RAT