IRF3805PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3805PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1260 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de IRF3805PBF MOSFET
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IRF3805PBF datasheet
irf3805lpbf irf3805pbf irf3805spbf.pdf
PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely
irf3805pbf irf3805spbf irf3805lpbf.pdf
PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely
irf3805l-7ppbf irf3805s-7ppbf.pdf
PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest proc
auirf3805strl.pdf
PD - 96319 AUTOMOTIVE GRADE AUIRF3805 AUIRF3805S AUIRF3805L Features HEXFET Power MOSFET l Advanced Process Technology V(BR)DSS 55V D l Ultra Low On-Resistance RDS(on) typ. 2.6m l 175 C Operating Temperature l Fast Switching max. 3.3m G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 210A l Lead-Free, RoHS Compliant S l Automotive Qualified * ID
Otros transistores... IRF3711ZCLPBF, IRF3711ZLPBF, IRF3711ZPBF, IRF3711ZSPBF, IRF3717PBF, IRF3717PBF-1, IRF3805L-7PPBF, IRF3805LPBF, SI2302, IRF3805S-7PPBF, IRF3805SPBF, IRF3808L, IRF3808LPBF, IRF3808PBF, IRF3808SPBF, FQD6N50CTF, FQD6N50CTM
History: FQP1N60 | IRF3808SPBF
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