IRF3805S-7PPBF Todos los transistores

 ..1. Size:308K  international rectifier
 irf3805l-7ppbf irf3805s-7ppbf.pdf

PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest proc

 ..2. Size:340K  international rectifier
 irf3805s-7ppbf irf3805l-7ppbf.pdf

IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.6m G l Lead-Free S ID = 160A Description S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET Power MOSFET utilizes the latest processing techni

 3.1. Size:743K  infineon
 auirf3805s-7p auirf3805l-7p.pdf

AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175 C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed

 6.1. Size:389K  international rectifier
 irf3805lpbf irf3805pbf irf3805spbf.pdf

PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 6.2. Size:389K  international rectifier
 irf3805pbf irf3805spbf irf3805lpbf.pdf

PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 3.3m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely

 6.3. Size:382K  international rectifier
 auirf3805strl.pdf

PD - 96319 AUTOMOTIVE GRADE AUIRF3805 AUIRF3805S AUIRF3805L Features HEXFET Power MOSFET l Advanced Process Technology V(BR)DSS 55V D l Ultra Low On-Resistance RDS(on) typ. 2.6m l 175 C Operating Temperature l Fast Switching max. 3.3m G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 210A l Lead-Free, RoHS Compliant S l Automotive Qualified * ID

 6.4. Size:754K  infineon
 auirf3805 auirf3805s auirf3805l.pdf

AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.6m Ultra Low On-Resistance max. 3.3m 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotiv

 6.5. Size:258K  inchange semiconductor
 irf3805s.pdf

Isc N-Channel MOSFET Transistor IRF3805S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt