FQD7N10LTM Todos los transistores

 

FQD7N10LTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD7N10LTM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 4.6 nC

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 55 pF

Resistencia drenaje-fuente RDS(on): 0.35 Ohm

Empaquetado / Estuche: D-PAK

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FQD7N10LTM Datasheet (PDF)

1.1. fqd7n10ltf fqd7n10ltm.pdf Size:625K _fairchild_semi

FQD7N10LTM
FQD7N10LTM

October 2008 QFET® FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology is especia

2.1. fqd7n10l fqu7n10l.pdf Size:625K _fairchild_semi

FQD7N10LTM
FQD7N10LTM

October 2008 QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology is especially tailored t

 3.1. fqd7n10tm.pdf Size:589K _fairchild_semi

FQD7N10LTM
FQD7N10LTM

October 2008 QFET® FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology is especially tail

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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