FQD7P20TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD7P20TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.69 Ohm

Encapsulados: D-PAK

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FQD7P20TM datasheet

 ..1. Size:731K  fairchild semi
fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf pdf_icon

FQD7P20TM

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo

 7.1. Size:947K  onsemi
fqd7p20.pdf pdf_icon

FQD7P20TM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.2. Size:265K  inchange semiconductor
fqd7p20.pdf pdf_icon

FQD7P20TM

isc P-Channel MOSFET Transistor FQD7P20 FEATURES Drain Current I = -5.7A@ T =25 D C Drain Source Voltage- V = -200V(Min) DSS Static Drain-Source On-Resistance R = 0.69 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.1. Size:707K  fairchild semi
fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf pdf_icon

FQD7P20TM

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially

Otros transistores... FQD7N20LTM, FQD7N20TF, FQD7N20TM, FQD7N30TF, FQD7N30TM, FQD7P06TF, FQD7P06TM, FQD7P20TF, K2611, FQD8N25TF, FQD8P10TF, FQD8P10TM, FQD9N25TF, FQD9N25TM, FQE10N20CTU, FQH140N10, FQH18N50V2