FQI13N50CTU Todos los transistores

 

FQI13N50CTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI13N50CTU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 195 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 43 nC

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.48 Ohm

Empaquetado / Estuche: I2-PAK

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FQI13N50CTU Datasheet (PDF)

1.1. fqb13n50c fqi13n50c.pdf Size:967K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to

1.2. fqi13n50ctu.pdf Size:967K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

October 2008 QFET® FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially

 4.1. fqi13n06tu.pdf Size:673K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

May 2001 TM QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially

4.2. fqi13n06ltu.pdf Size:668K _fairchild_semi

FQI13N50CTU
FQI13N50CTU

May 2001 TM QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been es

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