FQI17N08LTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQI17N08LTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 65 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 16.5 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 290 nS
   Conductancia de drenaje-sustrato (Cd): 120 pF
   Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
   Paquete / Cubierta: I2-PAK

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FQI17N08LTU Datasheet (PDF)

..1. Size:569K fairchild semi
fqb17n08ltm fqi17n08ltu.pdf

December 2000TMQFETQFETQFETQFETFQB17N08L / FQI17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

6.1. Size:614K fairchild semi
fqb17n08tm fqi17n08tu.pdf

January 2001TMQFETQFETQFETQFETFQB17N08 / FQI17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technolo

9.1. Size:691K fairchild semi
fqb17p06tm fqi17p06tu.pdf

May 2001TMQFETFQB17P06 / FQI17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially

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