FQI17N08TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQI17N08TU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 16.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Paquete / Cubierta: I2-PAK
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FQI17N08TU Datasheet (PDF)
fqb17n08tm fqi17n08tu.pdf

January 2001TMQFETQFETQFETQFETFQB17N08 / FQI17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technolo
fqb17n08ltm fqi17n08ltu.pdf

December 2000TMQFETQFETQFETQFETFQB17N08L / FQI17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced
fqb17p06tm fqi17p06tu.pdf

May 2001TMQFETFQB17P06 / FQI17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially
Otros transistores... FQI12N60CTU , FQI12N60TU , FQI13N06LTU , FQI13N06TU , FQI13N50CTU , FQI15P12TU , FQI16N25CTU , FQI17N08LTU , 10N60 , FQI17P06TU , FQI19N20CTU , FQI19N20TU , FQI1P50TU , FQI27N25TU , FQI27P06TU , FQI2N30TU , FQI2N90TU .
History: DM10N65C-2 | 2N5640 | FMI13N60E
History: DM10N65C-2 | 2N5640 | FMI13N60E



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