FQI17P06TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI17P06TU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 325 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: I2-PAK

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FQI17P06TU datasheet

 ..1. Size:691K  fairchild semi
 fqb17p06tm fqi17p06tu.pdf pdf_icon

FQI17P06TU

May 2001 TM QFET FQB17P06 / FQI17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially

 9.1. Size:614K  fairchild semi
 fqb17n08tm fqi17n08tu.pdf pdf_icon

FQI17P06TU

January 2001 TM QFET QFET QFET QFET FQB17N08 / FQI17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technolo

 9.2. Size:569K  fairchild semi
 fqb17n08ltm fqi17n08ltu.pdf pdf_icon

FQI17P06TU

December 2000 TM QFET QFET QFET QFET FQB17N08L / FQI17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced

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