FQI2NA90TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQI2NA90TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 107 W
   Voltaje máximo drenador - fuente |Vds|: 900 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 2.8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 40 nS
   Conductancia de drenaje-sustrato (Cd): 52 pF
   Resistencia entre drenaje y fuente RDS(on): 5.8 Ohm
   Paquete / Cubierta: I2-PAK

Búsqueda de reemplazo de MOSFET FQI2NA90TU

FQI2NA90TU Datasheet (PDF)

..1. Size:705K fairchild semi
fqb2na90tm fqi2na90tu.pdf

September 2000TMQFETQFETQFETQFETFQB2NA90 / FQI2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced tech

9.1. Size:321K fairchild semi
fqi2n80tu.pdf

I2-PAK Tube Packing DataI2-PAK Tube Packing Configuration: Figure 1.0Packaging Description:50 units per TubeI2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

9.2. Size:754K fairchild semi
fqb2n90tm fqi2n90tu.pdf

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

9.3. Size:741K fairchild semi
fqb2n30tm fqi2n30tu.pdf

May 2000TMQFETQFETQFETQFETFQB2N30 / FQI2N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology h

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: