FQI2NA90TU Todos los transistores

 

FQI2NA90TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI2NA90TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 107 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 15 nC

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 52 pF

Resistencia drenaje-fuente RDS(on): 5.8 Ohm

Empaquetado / Estuche: I2-PAK

Búsqueda de reemplazo de MOSFET FQI2NA90TU

 

 

FQI2NA90TU Datasheet (PDF)

1.1. fqi2na90tu.pdf Size:705K _fairchild_semi

FQI2NA90TU
FQI2NA90TU

September 2000 TM QFET QFET QFET QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced tech

5.1. fqi2n30tu.pdf Size:741K _fairchild_semi

FQI2NA90TU
FQI2NA90TU

May 2000 TM QFET QFET QFET QFET FQB2N30 / FQI2N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology h

5.2. fqi2n90tu.pdf Size:754K _fairchild_semi

FQI2NA90TU
FQI2NA90TU

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.2A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technolo

 5.3. fqi2n80tu.pdf Size:321K _fairchild_semi

FQI2NA90TU

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration: Figure 1.0 Packaging Description: 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

Otros transistores... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

Back to Top

 


FQI2NA90TU
  FQI2NA90TU
  FQI2NA90TU
  FQI2NA90TU
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

Back to Top