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FQI3P20TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI3P20TU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 52 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 6 nC

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 45 pF

Resistencia drenaje-fuente RDS(on): 2.7 Ohm

Empaquetado / Estuche: I2-PAK

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FQI3P20TU Datasheet (PDF)

1.1. fqi3p20tu.pdf Size:558K _fairchild_semi

FQI3P20TU
FQI3P20TU

April 2000 TM QFET QFET QFET QFET FQB3P20 / FQI3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technolo

5.1. fqb3p50 fqi3p50.pdf Size:645K _fairchild_semi

FQI3P20TU
FQI3P20TU

August 2000 TM QFET QFET QFET QFET FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. -2.7A, -500V, RDS(on) = 4.9? @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 18 nC) mini

5.2. fqi3p50tu.pdf Size:645K _fairchild_semi

FQI3P20TU
FQI3P20TU

August 2000 TM QFET QFET QFET QFET FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V This advanced technology has been especially tailored to • Low gate charge ( typical 1

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