FQI5N20LTU Todos los transistores

 

FQI5N20LTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQI5N20LTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: I2-PAK
 

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FQI5N20LTU Datasheet (PDF)

 ..1. Size:538K  fairchild semi
 fqb5n20ltm fqi5n20ltu.pdf pdf_icon

FQI5N20LTU

December 2000TMQFETQFETQFETQFETFQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

 6.1. Size:539K  fairchild semi
 fqb5n20l fqi5n20l.pdf pdf_icon

FQI5N20LTU

December 2000TMQFETQFETQFETQFETFQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

 7.1. Size:700K  fairchild semi
 fqb5n20tm fqi5n20tu.pdf pdf_icon

FQI5N20LTU

April 2000TMQFETQFETQFETQFETFQB5N20 / FQI5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.1. Size:655K  fairchild semi
 fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

FQI5N20LTU

TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored

MOSTRAR MÁS

Otros transistores... FQI47P06TU , FQI4N20TU , FQI4N25TU , FQI4N90TU , FQI4P40TU , FQI50N06LTU , FQI50N06TU , FQI5N15TU , IRF9540N , FQI5N20TU , FQI5N30TU , FQI5N40TU , FQI5N50CTU , FQI5N60CTU , FQI5N80TU , FQI5P10TU , FQI6N15TU .

History: HCP12NK65V | AFN3414S

 

 
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