FQI7N10TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI7N10TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: I2-PAK

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FQI7N10TU datasheet

 ..1. Size:546K  fairchild semi
 fqi7n10tu.pdf pdf_icon

FQI7N10TU

December 2000 TM QFET QFET QFET QFET FQB7N10 / FQI7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technolo

 7.1. Size:554K  fairchild semi
 fqb7n10ltm fqi7n10ltu.pdf pdf_icon

FQI7N10TU

December 2000 TM QFET QFET QFET QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced

 9.1. Size:836K  fairchild semi
 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf pdf_icon

FQI7N10TU

October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially

 9.2. Size:651K  fairchild semi
 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf pdf_icon

FQI7N10TU

October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially

MOSTRAR MÁS

Otros transistores... FQI5N60CTU, FQI5N80TU, FQI5P10TU, FQI6N15TU, FQI6N40CTU, FQI6N50TU, FQI6N60CTU, FQI7N10LTU, STP80NF70, FQI7N60TU, FQI7N80TU, FQI8N60CTU, FQI8P10TU, FQI9N08LTU, FQI9N08TU, FQI9N15TU, FQI9N25CTU