FQI9N50CTU Todos los transistores

 

FQI9N50CTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQI9N50CTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: I2-PAK
 

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FQI9N50CTU Datasheet (PDF)

 ..1. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf pdf_icon

FQI9N50CTU

TMQFETFQB9N50C/FQI9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

 7.1. Size:705K  fairchild semi
 fqb9n50tm fqi9n50tu.pdf pdf_icon

FQI9N50CTU

April 2000TMQFETQFETQFETQFETFQB9N50 / FQI9N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology

 9.1. Size:610K  fairchild semi
 fqi9n08ltu.pdf pdf_icon

FQI9N50CTU

June 2000TMQFETQFETQFETQFETFQB9N08L / FQI9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced techno

 9.2. Size:869K  fairchild semi
 fqb9n25ctm fqi9n25ctu.pdf pdf_icon

FQI9N50CTU

QFETFQB9N25C/FQI9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailore

MOSTRAR MÁS

Otros transistores... FQI7N60TU , FQI7N80TU , FQI8N60CTU , FQI8P10TU , FQI9N08LTU , FQI9N08TU , FQI9N15TU , FQI9N25CTU , STP80NF70 , FQI9N50TU , FQL50N40 , FQN1N50CBU , FQN1N50CTA , FQN1N60CBU , FQN1N60CTA , FQNL1N50BBU , FQNL1N50BTA .

History: CEB14N5 | HGS090NE6A | CEB21A2 | ELM34415AA | SIR494DP | IPD220N06L3G | IPD50N04S4-08

 

 
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