FQN1N50CTA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQN1N50CTA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO-92

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FQN1N50CTA datasheet

 ..1. Size:1065K  fairchild semi
 fqn1n50cbu fqn1n50cta.pdf pdf_icon

FQN1N50CTA

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica

 6.1. Size:1068K  fairchild semi
 fqn1n50c.pdf pdf_icon

FQN1N50CTA

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica

 9.1. Size:682K  fairchild semi
 fqn1n60cbu fqn1n60cta.pdf pdf_icon

FQN1N50CTA

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimi

 9.2. Size:683K  fairchild semi
 fqn1n60c.pdf pdf_icon

FQN1N50CTA

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimi

MOSTRAR MÁS

Otros transistores... FQI9N08LTU, FQI9N08TU, FQI9N15TU, FQI9N25CTU, FQI9N50CTU, FQI9N50TU, FQL50N40, FQN1N50CBU, AO3407, FQN1N60CBU, FQN1N60CTA, FQNL1N50BBU, FQNL1N50BTA, FQNL2N50BBU, FQNL2N50BTA, FQP10N20, FQP10N20CTSTU