FQN1N60CBU Todos los transistores

 

FQN1N60CBU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQN1N60CBU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 19 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 11.5 Ohm
   Paquete / Cubierta: TO-92
 

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FQN1N60CBU Datasheet (PDF)

 ..1. Size:682K  fairchild semi
 fqn1n60cbu fqn1n60cta.pdf pdf_icon

FQN1N60CBU

QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi

 6.1. Size:683K  fairchild semi
 fqn1n60c.pdf pdf_icon

FQN1N60CBU

QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi

 6.2. Size:887K  onsemi
 fqn1n60c.pdf pdf_icon

FQN1N60CBU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:1065K  fairchild semi
 fqn1n50cbu fqn1n50cta.pdf pdf_icon

FQN1N60CBU

January 2006QFETFQN1N50C 500V N-Channel MOSFETFeatures Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.9 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica

MOSTRAR MÁS

Otros transistores... FQI9N08TU , FQI9N15TU , FQI9N25CTU , FQI9N50CTU , FQI9N50TU , FQL50N40 , FQN1N50CBU , FQN1N50CTA , 75N75 , FQN1N60CTA , FQNL1N50BBU , FQNL1N50BTA , FQNL2N50BBU , FQNL2N50BTA , FQP10N20 , FQP10N20CTSTU , FQP10N60 .

History: AFN4946W | NCE65N760F

 

 
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