IRFY440 Todos los transistores

 

IRFY440 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFY440
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 68.5(max) nC
   trⓘ - Tiempo de subida: 73(max) nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO257AA

 Búsqueda de reemplazo de MOSFET IRFY440

 

IRFY440 Datasheet (PDF)

 ..1. Size:132K  international rectifier
irfy440.pdf

IRFY440 IRFY440

PD - 94193IRFY440,IRFY440MPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY440 0.85 7.0A GlassIRFY440M 0.85 7.0A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-sta

 0.1. Size:183K  international rectifier
irfy440cm.pdf

IRFY440 IRFY440

PD-91292DIRFY440C, IRFY440CMPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY440C 0.85 7.0A CeramicIRFY440CM 0.85 7.0A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-257AAThe efficient geometry design achieves very lo

 0.2. Size:133K  international rectifier
irfy440c.pdf

IRFY440 IRFY440

PD - 91292CIRFY440C,IRFY440CMPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY440C 0.85 7.0A GlassIRFY440CM 0.85 7.0A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low o

 0.3. Size:33K  semelab
irfy440-t257.pdf

IRFY440 IRFY440

IRFY440-T257MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)FOR HIRELAPPLICATIONS3.56 (0.140)Dia.3.81 (0.150)VDSS 500V1 2 3ID(cont) 5.5ARDS(on) 0.850.64 (0.025)Dia.0.89 (0.035) FEATURES2.54 (0.100) 3.05 (0.120)BSC BSC HERMETICALLY SEALED TO257AA

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
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