FQP13N06 Todos los transistores

 ..1. Size:663K  fairchild semi
 fqp13n06.pdf

May 2001 TM QFET FQP13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially tailored to

 0.1. Size:659K  fairchild semi
 fqp13n06l.pdf

May 2001 TM QFET FQP13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tai

 8.1. Size:554K  fairchild semi
 fqp13n10l.pdf

December 2000 TM QFET QFET QFET QFET FQP13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technolog

 8.2. Size:922K  fairchild semi
 fqp13n50c fqpf13n50c.pdf

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored t

 8.3. Size:1148K  fairchild semi
 fqp13n50cf fqpf13n50cf.pdf

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially t

 8.4. Size:1062K  fairchild semi
 fqp13n50c fqpf13n50c.pdf

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC) technology has been especia

 8.5. Size:618K  fairchild semi
 fqp13n10.pdf

January 2001 TM QFET QFET QFET QFET FQP13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee

 8.6. Size:883K  fairchild semi
 fqp13n50 fqpf13n50.pdf

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 8.7. Size:1172K  onsemi
 fqp13n50c fqpf13n50c.pdf

FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using ON Semiconductor s ID = 6.5 A proprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC) advanced technology has been especially tail

 8.8. Size:882K  onsemi
 fqp13n50 fqpf13n50.pdf

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored

 8.9. Size:206K  inchange semiconductor
 fqp13n10l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQP13N10L FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate

 8.10. Size:239K  inchange semiconductor
 fqp13n10.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQP13N10 FEATURES Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R 180m @V = 10V DS(on) GS Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T