FQP17N08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP17N08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 16.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de FQP17N08 MOSFET
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FQP17N08 datasheet
fqp17n08.pdf
January 2001 TM QFET QFET QFET QFET FQP17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has been
fqp17n08l.pdf
December 2000 TM QFET QFET QFET QFET FQP17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced technology i
fqp17n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been
Otros transistores... FQP10N20CTSTU, FQP10N60, FQP10N60CF, FQP11N40, FQP11N50CF, FQP12N60, FQP13N06, FQP16N15, IRFZ48N, FQP17N08L, FQP18N20V2, FQP18N50V2, FQP19N10, FQP19N10L, FQP19N20CTSTU, FQP19N20L, FQP1N50
History: UT3401
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