FQP18N50V2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP18N50V2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.265 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de FQP18N50V2 MOSFET
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FQP18N50V2 datasheet
fqp18n50v2 fqpf18n50v2.pdf
QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description 550V @TJ = 150 C These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 V DMOS technology. Low gate charge (typical 42 nC) This advanced technology has been especially tailored to mini- Lo
fqp18n50v2.pdf
TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor
fqp18n20v2 fqpf18n20v2.pdf
TM QFET FQP18N20V2/FQPF18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailore
Otros transistores... FQP11N40, FQP11N50CF, FQP12N60, FQP13N06, FQP16N15, FQP17N08, FQP17N08L, FQP18N20V2, IRLB3034, FQP19N10, FQP19N10L, FQP19N20CTSTU, FQP19N20L, FQP1N50, FQP1N60, FQP1P50, FQP20N06TSTU
History: FQD630TM
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