FQP2P25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP2P25
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 40 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de FQP2P25 MOSFET
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FQP2P25 datasheet
fqp2p25.pdf
April 2000 TM QFET QFET QFET QFET FQP2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has bee
fqp2p40.pdf
December 2013 FQP2P40 P-Channel QFET MOSFET -400 V, -2.0 A, 6.5 Description Features These P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 10 nC) planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF) This advanced technology has been esp
fqp2p40.pdf
FQP2P40 P-Channel QFET MOSFET -400 V, -2.0 A, 6.5 Description Features These P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 V transistors are produced using ON Semiconductor s Low Gate Charge (Typ. 10 nC) proprietary, planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF) This advanced technology has been especially
Otros transistores... FQP1P50, FQP20N06TSTU, FQP22P10, FQP27P06SW82127, FQP2N30, FQP2N50, FQP2N60, FQP2NA90, IRF3205, FQP32N12V2, FQP33N10L, FQP34N20L, FQP3N25, FQP3N40, FQP3N60, FQP3N80, FQP3N90
History: FQP2N50
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