FQP2P25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP2P25
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: TO-220
- Selección de transistores por parámetros
FQP2P25 Datasheet (PDF)
fqp2p25.pdf

April 2000TMQFETQFETQFETQFETFQP2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has bee
fqp2p40.pdf

December 2013FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 10 nC)planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been esp
fqp2p40.pdf

FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using ON Semiconductors Low Gate Charge (Typ. 10 nC)proprietary, planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been especially
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: VS6880AT | HM4612 | OSG80R900FF | IRFSL31N20DP | AP9563GK | P9515BD | AOTF7N70
History: VS6880AT | HM4612 | OSG80R900FF | IRFSL31N20DP | AP9563GK | P9515BD | AOTF7N70



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet | irf640