FQP3N40 Todos los transistores

 

FQP3N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP3N40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

FQP3N40 Datasheet (PDF)

 ..1. Size:707K  fairchild semi
fqp3n40.pdf pdf_icon

FQP3N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technology has been

 9.1. Size:810K  fairchild semi
fqp3n80c fqpf3n80c.pdf pdf_icon

FQP3N40

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

 9.2. Size:567K  fairchild semi
fqp3n60.pdf pdf_icon

FQP3N40

April 2000TMQFETQFETQFETQFETFQP3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been es

 9.3. Size:708K  fairchild semi
fqp3n30.pdf pdf_icon

FQP3N40

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been

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History: RFG60P06E | MTN50N06E3 | IPI051N15N5 | CS4N150VF | SM3116NAF | CPC3730 | SSFT4004

 

 
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