FQP3N90 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP3N90  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.25 Ohm

Encapsulados: TO-220

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FQP3N90 datasheet

 ..1. Size:689K  fairchild semi
 fqp3n90.pdf pdf_icon

FQP3N90

September 2000 TM QFET QFET QFET QFET FQP3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has

 9.1. Size:810K  fairchild semi
 fqp3n80c fqpf3n80c.pdf pdf_icon

FQP3N90

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t

 9.2. Size:567K  fairchild semi
 fqp3n60.pdf pdf_icon

FQP3N90

April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been es

 9.3. Size:707K  fairchild semi
 fqp3n40.pdf pdf_icon

FQP3N90

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has been

MOSTRAR MÁS

Otros transistores... FQP2P25, FQP32N12V2, FQP33N10L, FQP34N20L, FQP3N25, FQP3N40, FQP3N60, FQP3N80, IRFB4110, FQP44N08, FQP44N10F, FQP4N20, FQP4N25, FQP4N50, FQP4N60, FQP4N90, FQP4P25