IRF40H210 Todos los transistores

 ..1. Size:565K  1
 irf40h210.pdf

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 ..2. Size:565K  international rectifier
 irf40h210.pdf

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 7.1. Size:1158K  infineon
 irf40h233.pdf

IRF40H233 MOSFET SSO8 dual (TDSON-8-4) StrongIRFET 1 Benefits 8 2 7 3 6 Optimized for broadest availability from distribution partners 4 5 175 C junction temperature rated 100% UIL tested Product validation according to JEDEC standard Pb-Free ; RoHS Compliant ; Halogen-Free 8 1 7 2 6 3 5 4 Potential applications Brushed Motor drive applicatio

 9.1. Size:537K  international rectifier
 irf40b207.pdf

StrongIRFET IRF40B207 HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 3.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 4.5m Resonant mode power supplies S OR-ing and redund

 9.2. Size:552K  international rectifier
 irf40r207.pdf

StrongIRFET IRF40R207 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies max 5.1m G Synchronous rectifier applications ID (Silicon Limited) 90A Resonant mode power supplie

 9.3. Size:246K  inchange semiconductor
 irf40b207.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF40B207 IIRF40B207 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 9.4. Size:242K  inchange semiconductor
 irf40r207.pdf

isc N-Channel MOSFET Transistor IRF40R207, IIRF40R207 FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol