IRF40H210 Todos los transistores

 

IRF40H210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF40H210
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 805 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
   Paquete / Cubierta: PQFN5X6
 

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IRF40H210 Datasheet (PDF)

 ..1. Size:565K  1
irf40h210.pdf pdf_icon

IRF40H210

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 ..2. Size:565K  international rectifier
irf40h210.pdf pdf_icon

IRF40H210

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

 7.1. Size:1158K  infineon
irf40h233.pdf pdf_icon

IRF40H210

IRF40H233MOSFETSSO8 dual (TDSON-8-4)StrongIRFET1Benefits82736 Optimized for broadest availability from distribution partners 45 175C junction temperature rated 100% UIL tested Product validation according to JEDEC standard Pb-Free ; RoHS Compliant ; Halogen-Free81726354Potential applications Brushed Motor drive applicatio

 9.1. Size:537K  international rectifier
irf40b207.pdf pdf_icon

IRF40H210

StrongIRFET IRF40B207 HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 3.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 4.5m Resonant mode power supplies S OR-ing and redund

Otros transistores... FQP630TSTU , FQP6N15 , FQP6N25 , FQP6N50 , FQP6N50C , FQP6N60 , FQP6N80 , IRF40B207 , SPP20N60C3 , IRF40R207 , IRF4104L , IRF4104LPBF , IRF4104PBF , IRF4104SPBF , IRF4905LPBF , IRF4905PBF , IRF4905SPBF .

History: 2SK1524 | BRCS070N03DP | 2N7002TC | PMPB48EP | CJQ9435 | IPA041N04NG

 

 
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