IRF5M3205 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF5M3205

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO-254AA

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IRF5M3205 datasheet

 ..1. Size:111K  international rectifier
 irf5m3205.pdf pdf_icon

IRF5M3205

PD - 94292A HEXFET POWER MOSFET IRF5M3205 THRU-HOLE (TO-254AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 8.1. Size:112K  international rectifier
 irf5m3710.pdf pdf_icon

IRF5M3205

PD - 94234 HEXFET POWER MOSFET IRF5M3710 THRU-HOLE (TO-254AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 8.2. Size:111K  international rectifier
 irf5m3415.pdf pdf_icon

IRF5M3205

PD - 94286A HEXFET POWER MOSFET IRF5M3415 THRU-HOLE (TO-254AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.049 35A IRF5M3415 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 9.1. Size:112K  international rectifier
 irf5m5210.pdf pdf_icon

IRF5M3205

PD - 94247 HEXFET POWER MOSFET IRF5M5210 THRU-HOLE (TO-254AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

MOSTRAR MÁS

Otros transistores... IRF540ZSPBF, IRF5800, IRF5801PBF-1, IRF5803D2PBF, IRF5804, IRF5805PBF, IRF5806PBF, IRF5EA1310, 8N60, IRF5M3415, IRF5M3710, IRF5M4905, IRF5M5210, IRF5N3205, IRF5N3415, IRF5N3710, IRF5N4905