IRFZ10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFZ10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 11(max) nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO220

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IRFZ10 Datasheet (PDF)

..1. Size:373K international rectifier
irfz10.pdf

PD - 90440AIRFZ10DSDGTO-220ABGDSGate Drain Source06/24/05Document Number: 90363 www.vishay.com1IRFZ10Document Number: 90363 www.vishay.com2IRFZ10Document Number: 90363 www.vishay.com3IRFZ10Document Number: 90363 www.vishay.com4IRFZ10Document Number: 90363 www.vishay.com5IRFZ10Document Number: 90363 www.vishay.com6IRFZ10Peak Diode Rec

..2. Size:1167K vishay
irfz10 sihfz10.pdf

IRFZ10, SiHFZ10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 11 Ease of ParallelingQgs (nC) 3.1 Simple Drive RequirementsQgd (nC) 5.8 Compliant to RoHS Directive 2002/95/ECConfiguration Single

..3. Size:288K vishay
irfz10pbf sihfz10.pdf

9.1. Size:42K 1
irfz12 irfz15 irfz25 irfz35 irfz45.pdf

9.2. Size:43K international rectifier
irfz1x irfz2x irfz3x irfz4x.pdf

9.3. Size:875K international rectifier
irfz14pbf.pdf

PD - 94959IRFZ14PbF Lead-Freewww.irf.com 101/29/04IRFZ14PbF2 www.irf.comIRFZ14PbFwww.irf.com 3IRFZ14PbF4 www.irf.comIRFZ14PbFwww.irf.com 5IRFZ14PbF6 www.irf.comIRFZ14PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)2.62 (.103) 4.20 (.165)- A -

9.4. Size:234K international rectifier
irfz14s.pdf

PD - 9.890AIRFZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175C Operating Temperature RDS(on) = 0.20 Fast SwitchingGID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

9.5. Size:185K international rectifier
irfz14s-l.pdf

9.6. Size:167K international rectifier
irfz14.pdf

9.7. Size:435K samsung
irfz14a.pdf

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area 175 Operating TemperatureA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.097 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

9.8. Size:333K vishay
irfz14s irfz14l sihfz14s sihfz14l.pdf

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw

9.9. Size:324K vishay
irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf

9.10. Size:1583K vishay
irfz14 sihfz14.pdf

IRFZ14, SiHFZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingQg (Max.) (nC) 11 COMPLIANT Ease of ParallelingQgs (nC) 3.1Qgd (nC) 5.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

9.11. Size:376K vishay
irfz14s sihfz14s sihfz14l.pdf

IRFZ14S, SiHFZ14S, SiHFZ14Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESD Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S)I2PAK (TO-262)D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switchingAvailableG Material categorization: for definitions ofcompliance please see www.vishay.c

Otros transistores... IRFY9120 , IRFY9120C , IRFY9130 , IRFY9130C , IRFY9140 , IRFY9140C , IRFY9240 , IRFY9240C , IRFB31N20D , IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , IRFZ24 , IRFZ24A .

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