IRF5N3710 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF5N3710
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 86 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SMD1

Búsqueda de reemplazo de MOSFET IRF5N3710

IRF5N3710 Datasheet (PDF)

..1. Size:114K international rectifier
irf5n3710.pdf

PD - 94235AHEXFET POWER MOSFET IRF5N3710SURFACE MOUNT (SMD-1)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 100V 0.028 45A IRF5N3710Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

8.1. Size:171K international rectifier
irf5n3205.pdf

PD-94302BHEXFET POWER MOSFET IRF5N3205SURFACE MOUNT (SMD-1)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5N3205 55V 0.008 55A*Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast s

8.2. Size:115K international rectifier
irf5n3415.pdf

PD - 94267HEXFET POWER MOSFET IRF5N3415SURFACE MOUNT (SMD-1)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0.042 37.5A IRF5N3415Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

9.1. Size:171K international rectifier
irf5nj3315.pdf

PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

9.2. Size:114K international rectifier
irf5njz48.pdf

PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa

9.3. Size:115K international rectifier
irf5nj9540.pdf

PD - 94038AHEXFET POWER MOSFET IRF5NJ9540SURFACE MOUNT (SMD-0.5)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with

9.4. Size:117K international rectifier
irf5n4905.pdf

PD - 94163HEXFET POWER MOSFET IRF5N4905SURFACE MOUNT (SMD-1)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -55V 0.024 -55A* IRF5N4905Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

9.5. Size:171K international rectifier
irf5n5210.pdf

PD-94154AHEXFET POWER MOSFET IRF5N5210SURFACE MOUNT (SMD-1)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5N5210 -100V 0.060 -31AFifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with then L

9.6. Size:117K international rectifier
irf5nj5305.pdf

PD - 94033HEXFET POWER MOSFET IRF5NJ5305SURFACE MOUNT (SMD-0.5)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with th

9.7. Size:111K international rectifier
irf5njz34.pdf

PD - 94600IRF5NJZ34HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ34 55V 0.04 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:fast

9.8. Size:113K international rectifier
irf5nj540.pdf

PD - 94020AIRF5NJ540HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJ540 100V 0.052 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

9.9. Size:114K international rectifier
irf5nj6215.pdf

PD - 94284AHEXFET POWER MOSFET IRF5NJ6215SURFACE MOUNT (SMD-0.5)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

9.10. Size:1326K cn sps
smirf5n65.pdf

SMIRF5N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3(VGS=10V, ID=2.5A) on-state resistance, provide superior

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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